2sD768(k) silicon npn epitaxial application medium speed and power switching complementary pair with 2sb727(k) outline to-220ab 3 k w (typ) 200 w (typ) 1 2 3 1. base 2. collector (flange) 3. emitter 1 2 3 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 120 v emitter to base voltage v ebo 7v collector current i c 6a collector peak current i c(peak) 10 a collector power dissipation p c * 1 40 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c note: 1. value at t c = 25 c. free datasheet http:///
2sD768(k) 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 120 v i c = 25 ma, r be = emitter to base breakdown voltage v (br)ebo 7 vi e = 50 ma, i c = 0 collector cutoff current i cbo 100 m av cb = 120 v, i e = 0 i ceo 10 m av ce = 100 v, r be = dc current transfer ratio h fe 1000 20000 v ce = 3 v, i c = 3 a* 1 collector to emitter saturation v ce(sat)1 1.5 v i c = 3 a, i b = 6 ma* 1 voltage v ce(sat)2 3vi c = 6a, i b = 60 ma* 1 base to emitter saturation v be(sat)1 2vi c = 3 a, i b = 6 ma* 1 voltage v be(sat)2 3.5 v i c = 6 a, i b = 60 ma* 1 turn on time t on 1.0 m si c = 3 a, i b1 = ? b2 = 6 ma turn off time t off 3.0 m si c = 3 a, i b1 = ? b2 = 6 ma note: 1. pulse test. maximum collector dissipation curve 60 40 20 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 30 10 3 1.0 0.3 0.1 collector current i c (a) 0.03 1 3 30 300 10 100 1,000 collector to emitter voltage v ce (v) i c(peak) i c(max) dc operation(t c = 25 c) pw = 10 ms 1 ms 100 m s area of safe operation ta = 25 c 1 shot pulse 1 m s free datasheet http:///
2sD768(k) 3 typical output characteristics t c = 25 c i b = 0 10 8 6 4 2 012 collector to emitter voltage v ce (v) 5 4 3 collector current i c (a) 0.2 ma 0.4 1.2 0.6 0.8 1.0 10,000 3,000 1,000 300 100 0.1 0.3 3 10 1.0 dc current transfer ratio h fe collector current i c (a) dc current transfer ratio vs. collector current ta = 75 c ?5 c 25 c v ce = 3 v pulse saturation voltage vs. collector current t c = 25 c 10 3 1.0 0.3 0.1 collector to emitter saturation voltage v ce(sat) (v) base to emitter sauration voltage v be(sat) (v) 0.1 0.3 collector current i c (a) 3 1.0 10 v be(sat) v ce(sat) i c / i b = 200 500 200 i c / i b = 500 t f t on t stg v cc = 30v i c = 500 i b1 = ?00 i b2 ta = 25 c switching time vs. collector current switching time t ( m s) 10 3 1.0 0.3 0.1 0.03 0.01 0.3 0.1 1.0 collector current i c (a) 310 free datasheet http:///
2sD768(k) 4 transient thermal resistance 10 3 1.0 0.3 0.1 0.03 0.01 1 10 100 1,000 (s) 1 10 100 1,000 (ms) time t thermal resistance q j-c ( c/w) t c = 25 c 1 to 1,000 s 1 to 1,000 ms free datasheet http:///
0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.5 15.0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ?.1 f 3.6 +0.1 -0.08 hitachi code jedec eiaj weight (reference value) to-220ab conforms conforms 1.8 g unit: mm free datasheet http:///
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